Teacher Details

Bhave, T.M.

Department of Electronic and Instrumentation Science

1)    Chinke, S.L., Sandhu, I.S., Bhave, T.M., Alegaonkar, P.S. (2021). Shock wave hydrodynamics of nano-carbons. Materials Chemistry and Physics, 263, 124337. ISSN(print/online): 0254-0584/1879-3312, URL/DOI: http://dx.doi.org/10.1016/j.matchemphys.2021.124337
2)    Gore, S.P., Funde, A.M., Salve, T.S., Bhave, T.M., Jadkar, S.R., Ghaisas, S.V. (2011). Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at low Power Plasma. Journal of Nano-and Electronic Physics, 3 (1), 370-375. Google Scholar Citations, ISSN(print/online): 2077-6772/2306-4277, URL/DOI: http://search.proquest.com/openview/bfc5bec0e3b06234933f3b7eb641fd11/1?pq-origsite=gscholar
  

Publications Before 2011


3)    Castrucci, P., Scarselli, M., De Crescenzi, M., Diociaiuti, M., Chaudhari, P.S., Balasubramanian, C., Bhave, T.M., Bhoraskar, S.V. (2006). Silicon nanotubes: Synthesis and characterization. Thin Solid Films, 508 (1-2), 226-230 . Google Scholar Citations, ISSN(print/online): 0040-6090/1879-2731, URL/DOI: http://dx.doi.org/10.1016/j.tsf.2005.07.348
4)    De Crescenzi, M., Castrucci, P., Scarselli, M., Diociaiuti, M., Chaudhari, P.S., Balasubramanian, C., Bhave, T.M., Bhoraskar, S.V. (2005). Experimental imaging of silicon nanotubes. Applied Physics Letters, 86 (23), 231901. Google Scholar Citations, ISSN(print/online): 0003-6951/1077-3118 , URL/DOI: http://dx.doi.org/10.1063/1.1943497
5)    Bhave, T.M., Balasubramanian, C., Nagar, H., Kulkarni, S., Pasricha, R., Bakare, P.P., Date, S.K., Bhoraskar, S.V. (2005). Oriented growth of nanocrystalline gamma ferric oxide in electrophoretically deposited films. Hyperfine Interactions, 160 (1-4), 199-209. Google Scholar Citations, ISSN(print/online): 0304-3843/1572-9540, URL/DOI: http://dx.doi.org/10.1007/s10751-005-9165-5
6)    Chaudhari, P.S., Bhave, T.M., Kanjilal, D., Bhoraskar, S.V. (2003). Swift heavy ion induced growth of nanocrystalline silicon in silicon oxide. Journal of Applied Physics, 93 (6), 3486. Google Scholar Citations, ISSN(print/online): 0021-8979/1089-7550, URL/DOI: http://dx.doi.org/10.1063/1.1542913
7)    Deshmukh, N.V., Bhave, T.M., Ethiraj, A.S., Sainkar, S.R., Ganesan, V., Bhoraskar, S.V., Kulkarni, S.K. (2001). Photoluminescence and IV characteristics of a CdS-nanoparticles-porous-silicon heterojunction. Nanotechnology, 12 (3), 290-294. Google Scholar Citations, ISSN(print/online): 0957-4484/1361-6528, URL/DOI: http://dx.doi.org/10.1088/0957-4484/12/3/316
8)    Bhave, T.M., Hullavarad, S.S., Bhoraskar, S.V., Hegde, S.G., Kanjilal, D. (1999). FTIR studies of swift silicon and oxygen ion irradiated porous silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 156, 121-124. Google Scholar Citations, ISSN(print/online): 0168-583X/1872-9584, URL/DOI: http://dx.doi.org/10.1016/S0168-583X(99)00279-7
9)    Bhave, T.M., Bhoraskar, S.V. (1998). Surface work function studies in porous silicon. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 16 (4), 2073-2078. Google Scholar Citations, ISSN(print/online): 1071-1023/1520-8567, URL/DOI: http://dx.doi.org/10.1116/1.590129
10)    Bhave, T.M., Bhoraskar, S.V., Kulkarni, S., Bhoraskar, V.N. (1996). Improvement in the photoluminescence efficiency of porous silicon using high-energy silicon ion irradiation. Journal of Physics D: Applied Physics, 29 (2), 462-465. Google Scholar Citations, ISSN(print/online): 0022-3727/1361-6463, URL/DOI: http://dx.doi.org/10.1088/0022-3727/29/2/026