Teacher Details
Ghaisas Subhash Vasant
Department of Electronic and Instrumentation Science
svg@electronics.unipune.ac.in
| 1) | Nilegave, D.S., Sarangi, A., Rondiya, S.R., Shaikh, G.Y., Nasane, M.P., Jathar, S.B., Barma, S.V., Kore, K.B., Ghaisas, S.V., Chakraborty, S., Funde, A.M. (2025). Fabrication of Cu2NiSnS4 Nanoparticles on CdS with a Computationally Predicted Low Lattice Mismatch for Photoelectrochemical Hydrogen Evolution. ACS Applied Nano Materials,
8 (3), 1628-1639.
ISSN(print/online): 2574-0970,
URL/DOI: http://dx.doi.org/10.1021/acsanm.4c06654
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| 2) | Udawant, R.R., Takwale, M.G., Ghaisas, S.V., Mohite, K.C. (2020). Electroplated Co 3O 4 selective coatings for high-temperature solar thermal applications. Bulletin of Materials Science,
43, 154.
ISSN(print/online): 0250-4707/0973-7669,
URL/DOI: http://dx.doi.org/10.1007/s12034-020-02112-8
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| 3) | Nair, S., Deshpande, M.D., Shah, V., Ghaisas, S., Jadkar, S.R. (2019). Cs2TlBiI6: a new lead-free halide double perovskite with direct band gap. Journal of Physics Condensed Matter,
31 (44), 445902 .
ISSN(print/online): 0953-8984/1361-648X,
URL/DOI: http://dx.doi.org/10.1088/1361-648X/ab32a5
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| 4) | Francis, P., Ghaisas, S.V. (2018). Oxygen containing Si–H nanoparticles: a potential electrode for Li–ion battery. The European Physical Journal Applied Physics,
83, 10401.
ISSN(print/online): 1286-0042/1286-0050,
URL/DOI: http://dx.doi.org/10.1051/epjap/2018170277
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| 5) | Naderi, E., Ghaisas, S.V. (2016). A computational ab initio study of surface diffusion of sulfur on the CdTe (111) surface. AIP Advances,
6 (8), 085002.
ISSN(print/online): 2158-3226,
URL/DOI: http://dx.doi.org/10.1063/1.4960503
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| 6) | Ghaisas, S.V., Ananthakrishnan, S. (2016). Fundamental and applied research for the 'Make in India' programme. Current Science,
111 (3), 451-452. Google Scholar Citations,
ISSN(print/online): 0011-3891,
URL/DOI: http://www.currentscience.ac.in/Volumes/111/03/0451.pdf
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| 7) | Shinde, O.S., Funde, A.M., Agarwal, M., Jadkar, S.R., Mahamuni, S.R., Dusane, R.O., Dhere, N.G., Ghaisas, S.V. (2016). Emitter passivation of silicon solar cell via organic coating at room temperature. Journal of Materials Science: Materials in Electronics,
27 (12), 12459-12463.
ISSN(print/online): 0957-4522/1573-482X,
URL/DOI: http://dx.doi.org/10.1007/s10854-016-5706-8
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| 8) | Shinde, O.S., Funde, A.M., Kahane, S.V., Agarwal, M., Jadkar, S.R., Mahamuni, S.R., Dusane, R.O., Ghaisas, S.V. (2016). Construing the interaction between solar cell surface and fatty amine for the room temperature passivation. Solar Energy,
135, 359–365. Google Scholar Citations,
ISSN(print/online): 0038-092X/1471-1257,
URL/DOI: http://dx.doi.org/10.1016/j.solener.2016.05.054
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| 9) | Naderi, E., Nanavati, S., Majumder, C., Ghaisas, S.V. (2015). Diffusion of Cd and Te adatoms on CdTe(111) surfaces: A computational study using density functional theory. AIP Advances,
5 (1), 17134. Google Scholar Citations,
ISSN(print/online): 2158-3226,
URL/DOI: http://dx.doi.org/10.1063/1.4906794
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| 10) | Francis, P., Majumder, C., Ghaisas, S.V. (2015). The nonchalant magnetic ordering of vacancies in graphene. Carbon,
91, 358-369. Google Scholar Citations,
ISSN(print/online): 0008-6223/1873-3891,
URL/DOI: http://dx.doi.org/10.1016/j.carbon.2015.05.010
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| 11) | Francis, P., Ghaisas, S.V. (2013). Paramagnetic Silicon Nanoparticles Without Magnetic Ion Doping: An Ab-Initio Study Prediction. Silicon,
5 (4), 255-262. Google Scholar Citations,
ISSN(print/online): 1876-990X/1876-9918,
URL/DOI: http://dx.doi.org/10.1007/s12633-013-9150-6
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| 12) | Patil, S., Cherukupalli, R., Pramod, M.R., More, S., Mahamuni, S., Jadkar, S.R., Dusane, R.O., Dharmadhikari, C.V., Ghaisas, S.V. (2013). Passivation of n-type emitter and p-type base in solar cells via oxygen terminated silicon nanoparticles. Progress in Photovoltaics,
21 (5), 1146-1152. Google Scholar Citations,
ISSN(print/online): 1062-7995/1099-159X,
URL/DOI: http://dx.doi.org/10.1002/pip.2318
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| 13) | Francis, P., Patil, S., Rajesh, C., Chakraborty, S., Mahamuni, S., Dharmadhikari, C.V., Ghaisas, S.V. (2013). Electronic and optical properties of agglomerated hydrogen terminated silicon nanoparticles. European Physical Journal D,
67 (7), 144. Google Scholar Citations,
ISSN(print/online): 1434-6060/1434-6079,
URL/DOI: http://dx.doi.org/10.1140/epjd/e2013-40052-3
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| 14) | Chakraborty, S., Ghaisas, S.V., Majumder, C. (2012). An ab-initio study of silicon adsorption on metallic surfaces (Au/Ag): Novel perspective to explore chemical bonding. European Physical Journal B,
85 (7), 227. Google Scholar Citations,
ISSN(print/online): 1434-6028 /1434-6036,
URL/DOI: http://dx.doi.org/10.1140/epjb/e2012-20591-7
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| 15) | Chakraborty, S., Ghaisas, S.V. (2012). Relative localization prediction in Covalent Clusters: An Ab Initio theory driven quest. Advanced Science Letters,
18 (1), 208-212.
ISSN(print/online): 1936-6612/1936-7317,
URL/DOI: http://dx.doi.org/10.1166/asl.2012.4400
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| 16) | Nanavati, S. P., Sundararajan, V., Mahamuni, S., Ghaisas, S. V., Kumar, V. (2012). Nonstoichiometric Mn-doped ZnO magic nanoclusters and their composite structures from ab initio calculations. Physical Review B,
86 (20), 205320. Google Scholar Citations,
ISSN(print/online): 2469-9950/2469-9969,
URL/DOI: http://dx.doi.org/10.1103/PhysRevB.86.205320
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| 17) | Rajesh, C., Pramod, M.R., Patil, S., Mahamuni, S., More, S., Dusane, R.O., Ghaisas, S.V. (2012). Reduction in surface recombination through hydrogen and 1-heptene passivated silicon nanocrystals film on silicon solar cells. Solar Cells,
86 (1), 489-495. Google Scholar Citations,
ISSN(print/online): 0379-6787,
URL/DOI: http://dx.doi.org/10.1016/j.solener.2011.10.033
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| 18) | Nanavati, S.P., Sundararajan, V., Mahamuni, S., Ghaisas, S.V., Kumar, V. (2011). Discovery of a nonstoichiometric Zn11MnSe13 magnetic magic quantum dot from ab initio calculations. Physical Review B,
84 (4), 045306-045311. Google Scholar Citations,
ISSN(print/online): 2469-9950/2469-9969,
URL/DOI: http://dx.doi.org/10.1103/PhysRevB.84.045306
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| 19) | Gore, S.P., Funde, A.M., Salve, T.S., Bhave, T.M., Jadkar, S.R., Ghaisas, S.V. (2011). Properties of Silicon Dioxide Films Prepared Using Silane and Oxygen Feeds by PE-CVD at low Power Plasma. Journal of Nano-and Electronic Physics,
3 (1), 370-375. Google Scholar Citations,
ISSN(print/online): 2077-6772/2306-4277,
URL/DOI: http://search.proquest.com/openview/bfc5bec0e3b06234933f3b7eb641fd11/1?pq-origsite=gscholar
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| 20) | Chakraborty, S., Rajesh, C., Mahamuni, S., Ghaisas, S.V. (2011). Structural and Optical Properties of Oxygenated Silicon Quantum Dots. Advanced Science Letters,
4 (11-12), 3580-3584. Google Scholar Citations,
ISSN(print/online): 1936-6612/1936-7317,
URL/DOI: http://dx.doi.org/10.1166/asl.2011.1909
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| 21) | Chakraborty, S., Rajesh, C., Mahamuni, S., Ghaisas, S. V. (2011). Oxygen impact on quantum confinement effect for silicon clusters in different size regimes: ab initio investigations. European Physical Journal D,
64 (2-3), 331-337. Google Scholar Citations,
ISSN(print/online): 1434-6060/1434-6079,
URL/DOI: http://dx.doi.org/10.1140/epjd/e2011-10456-2
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| 22) | Chakraborty, S., Rajesh, Ch., Mahamuni, S., Ghaisas, S.V. (2011). Quantum Confinement Effect in Pristine and Oxygen Covered Silicon Nanocrystals with Surface States. Journal of Computational and Theoretical Nanoscience,
8 (9), 1739-1743.
ISSN(print/online): 1546-1955/1546-1963,
URL/DOI: http://dx.doi.org/10.1166/jctn.2011.1876
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| 23) | Rajesh, C., Patil, S., Datar, S., Bhattacharyya, D., Tripathi, A.K., Mahamuni, S., Dharmadhikari, C.V., Ghaisas, S.V. (2011). Water Adsorption on Oxygen Passivated Silicon Nanoparticles. Nanoscience and Nanotechnology Letters,
3 (5), 622-628. Google Scholar Citations,
ISSN(print/online): 1941-4900 /1941-4919,
URL/DOI: http://dx.doi.org/10.1166/nnl.2011.1240
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Publications Before 2011 |
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| 24) | Chakraborty, S., Ghaisas, S.V., Majumde, C. (2010). Structure and energetics of silicon clusters adsorbed on the Au(111) surface: a first principles study. International Journal of Nanotechnology,
7 (9), 833-842. Google Scholar Citations,
ISSN(print/online): 1475-7435/1741-8151,
URL/DOI: http://dx.doi.org/10.1504/IJNT.2010.034691
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| 25) | Nanavati, S.P., Sundararajan, V., Mahamuni, S., Kumar, V., Ghaisas, S.V. (2009). Optical properties of zinc selenide clusters from first-principles calculations. Physical Review B,
80 (24), 245417. Google Scholar Citations,
ISSN(print/online): 2469-9950/2469-9969,
URL/DOI: http://dx.doi.org/10.1103/PhysRevB.80.245417
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| 26) | Ghaisas, S.V. (2006). Stochastic model in the Kardar-Parisi-Zhang universality class with minimal finite size effects. Physical Review E,
73 (2), 22601. Google Scholar Citations,
ISSN(print/online): 2470-0045/2470-0053,
URL/DOI: http://dx.doi.org/10.1103/PhysRevE.73.022601
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| 27) | Ghaisas, S.V. (2006). Determination of cross over effects in lattice models from the local height difference distribution. European Physical Journal B,
52 (4), 557-562. Google Scholar Citations,
ISSN(print/online): 1434-6028 /1434-6036,
URL/DOI: http://dx.doi.org/10.1140/epjb/e2006-00331-6
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| 28) | Ghaisas, S.V. (2003). Surface kinetics and generation of different terms in a conservative growth equation. Physical Review E,
68 (1), 116051-1160512. Google Scholar Citations,
ISSN(print/online): 2470-0045/2470-0053,
URL/DOI: http://dx.doi.org/10.1103/PhysRevE.68.011605
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| 29) | Ghaisas, S.V. (2003). Mounding instability and incoherent surface kinetics. Physical Review E,
67 (1), 10601. Google Scholar Citations,
ISSN(print/online): 2470-0045/2470-0053,
URL/DOI: http://dx.doi.org/10.1103/PhysRevE.67.010601
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| 30) | Ghaisas, S.V. (2001). (2+1)-dimensional stochastic growth model and its application to some experimental observations. Physical Review E,
63 (6), 62601-62604. Google Scholar Citations,
ISSN(print/online): 2470-0045/2470-0053,
URL/DOI: http://dx.doi.org/10.1103/PhysRevE.63.062601
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| 31) | Pla, O., Guinea, F., Louis, E., Ghaisas, S.V., Sander, L.M. (2000). Straight cracks in dynamic brittle fracture. Physical Review B,
61 (17), 11472-11486. Google Scholar Citations,
ISSN(print/online): 2469-9950/2469-9969,
URL/DOI: http://dx.doi.org/10.1103/PhysRevB.61.11472
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| 32) | Sander, L.M., Ghaisas, S.V. (1999). Thermal noise and the branching threshold in brittle fracture. Physical Review Letters,
83 (10), 1994-1997. Google Scholar Citations,
ISSN(print/online): 0031-9007/1079-7114,
URL/DOI: http://dx.doi.org/10.1103/PhysRevLett.83.1994
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| 33) | Dharmadhikari, C.V., Kshirsagar, R.B., Ghaisas, S.V. (1999). Scaling behaviour of polished surfaces. Europhysics Letters,
45 (2), 215-221. Google Scholar Citations,
ISSN(print/online): 0295-5075/1286-4854,
URL/DOI: http://dx.doi.org/10.1209/epl/i1999-00149-4
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| 34) | Pla, O., Guinea, F., Louis, E., Ghaisas, S.V., Sander, L.M. (1998). Viscous effects in brittle fracture. Physical Review B,
57 (22), 13981-13984. Google Scholar Citations,
ISSN(print/online): 2469-9950/2469-9969,
URL/DOI: http://dx.doi.org/10.1103/PhysRevB.57.R13981
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| 35) | Sander, L.M., Ghaisas, S.V. (1997). Monte Carlo simulations of oscillations in the oxidation of CO on Pt at atmospheric pressure. Surface Science,
391, 125-133. Google Scholar Citations,
ISSN(print/online): 0039-6028/1879-2758,
URL/DOI: http://dx.doi.org/10.1016/S0039-6028(97)00467-6
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| 36) | Sarma, S.D., Lanczycki, C.J., Kotlyar, R., Ghaisas, S.V. (1996). Scale invariance and dynamical correlations in growth models of molecular beam epitaxy. Physical Review E,
53 (1), 359-388. Google Scholar Citations,
ISSN(print/online): 2470-0045/2470-0053,
URL/DOI: http://dx.doi.org/10.1103/PhysRevE.53.359
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| 37) | Sander, L.M., Ghaisas, S.V. (1996). Fractals and patterns in catalysis. Physica A: Statistical Mechanics and its Applications,
233, 629-639. Google Scholar Citations,
ISSN(print/online): 0378-4371/1873-2119,
URL/DOI: http://dx.doi.org/10.1016/S0378-4371(96)00166-5
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| 38) | Kshirsagar, A.K., Ghaisas, S.V. (1996). Nonlinearities in conservative growth equations. Physical Review E,
53 (2), 1325-1327. Google Scholar Citations,
ISSN(print/online): 2470-0045/2470-0053,
URL/DOI: http://dx.doi.org/10.1103/PhysRevE.53.R1325
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| 39) | Sarma, S.D., Ghaisas, S.V., Kim, J.M. (1994). Kinetic super-roughening and anomalous dynamic scaling in nonequilibrium growth models. Physical Review E,
49 (1), 122. Google Scholar Citations,
ISSN(print/online): 2470-0045/2470-0053,
URL/DOI: http://dx.doi.org/10.1103/PhysRevE.49.122
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| 40) | Sarma, S.D., Lanczycki, C.J., Ghaisas, S.V., Kim, J.M. (1994). Defect formation and crossover behavior in the dynamic scaling properties of molecular-beam epitaxy. Physical Review B,
49 (15), 10693. Google Scholar Citations,
ISSN(print/online): 2469-9950/2469-9969,
URL/DOI: http://dx.doi.org/10.1103/PhysRevB.49.10693
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| 41) | Kuruvilla, B.A., Ghaisas, S.V., Datta, A., Banerjee, S., Kulkarni, S.K. (1993). Passivation of GaAs (100) using selenium sulfide. Journal of Applied Physics,
73 (9), 4384-4387. Google Scholar Citations,
ISSN(print/online): 0021-8979/1089-7550,
URL/DOI: http://dx.doi.org/10.1063/1.352775
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| 42) | Faraji, M., Gokhale, S., Choudhari, S.M., Takwale, M.G., Ghaisas, S.V. (1992). High mobility hydrogenated and oxygenated microcrystalline silicon as a photosensitive material in photovoltaic applications. Applied Physics Letters,
60 (26), 3289-3291. Google Scholar Citations,
ISSN(print/online): 0003-6951/1077-3118 ,
URL/DOI: http://dx.doi.org/10.1063/1.106722
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| 43) | Ghaisas, S., Vispute, R.D., Ogale, S.B., Choudhari, S.M., Kanetkar, S.M., Kulkarni, S.K., Mahamuni, S., Badrinarayan, S., Ghaisas, S.V. (1992). The study of pulsed laser deposited films from a pressed, sintered, W–C mixture at two different fluences. Journal of Materials Research,
7 (12), 3250-3254. Google Scholar Citations,
ISSN(print/online): 0884-2914/2044-5326,
URL/DOI: http://dx.doi.org/10.1557/JMR.1992.3250
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| 44) | S. Das Sarma., Ghaisas, S.V. (1992). Solid-on-solid rules and models for nonequilibrium growth in 2+1 dimensions. Physical Review Letters,
69 (26), 3762-3265. Google Scholar Citations,
ISSN(print/online): 0031-9007/1079-7114,
URL/DOI: http://dx.doi.org/10.1103/PhysRevLett.69.3762
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| 45) | Ghaisas, S.V., Sarma, S.D (1992). Surface diffusion length under kinetic growth conditions. Physical Review B,
46 (11), 7308-7311. Google Scholar Citations,
ISSN(print/online): 2469-9950/2469-9969,
URL/DOI: http://dx.doi.org/10.1103/PhysRevB.46.7308
|
| 46) | Ghaisas, S.V. (1991). Vacancy-vacancy interaction in silicon studied using atomic potentials. Physical Review B,
43 (2), 1808-1811. Google Scholar Citations,
ISSN(print/online): 2469-9950/2469-9969,
URL/DOI: http://dx.doi.org/10.1103/PhysRevB.43.1808
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| 47) | Yedave, S.N., Chaudhari, S.M., Kanetkar, S.M., Ogale, S.B., Ghaisas, S.V. (1990). Ion‐beam mixing in an Al‐Fe‐Mn system: A conversion‐electron Mössbauer and x‐ray diffraction study. Journal of Applied Physics,
67 (2), 710. Google Scholar Citations,
ISSN(print/online): 0021-8979/1089-7550,
URL/DOI: http://dx.doi.org/10.1063/1.345776
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| 48) | Bulakh, N.R., Ghaisas, S.V., Kanetkar, S.M., Ogale, S.B. (1990). Compound synthesis by an electric-field-generated plasma at the liquid-solid interface. Thin Solid Films,
188 (1), 57-66.
ISSN(print/online): 0040-6090/1879-2731,
URL/DOI: http://dx.doi.org/10.1016/0040-6090(90)90193-H
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| 49) | Faraji, M., Babras, S., Mirzapour, S., Agashe, C., Rajarshi, S., Dusane, R., Ghaisas, S (1990). Photovoltaic, i-v and c-v characteristics of sno2/sio2/a-si:H/mc-si:H structures. Japanese Journal of Applied Physics,
29 (11), 2080-2081. Google Scholar Citations,
ISSN(print/online): 0021-4922/1347-4065,
URL/DOI: http://dx.doi.org/10.1143/JJAP.29.L2080
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| 50) | Ghaisas, S.V., Madhukar, A. (1989). Kinetic aspects of growth front surface morphology and defect formation during molecular‐beam epitaxy growth of strained thin films. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics,
7 (2), 264-268. Google Scholar Citations,
ISSN(print/online): 1071-1023/1520-8567,
URL/DOI: http://dx.doi.org/10.1116/1.584730
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| 51) | Ghaisas, S.V. (1989). Study of the kinetics of Ga on strained GaAs(001) surface using atomic potentials. Surface Science,
223 (3), 441-448. Google Scholar Citations,
ISSN(print/online): 0039-6028/1879-2758,
URL/DOI: http://dx.doi.org/10.1016/0039-6028(89)90672-9
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| 52) | Ghaisas, S.V., Madhukar, A. (1989). Surface kinetics and growth interruption in molecular‐beam epitaxy of compound semiconductors: A computer simulation study. Journal of Applied Physics,
65 (10), 3872 -3876. Google Scholar Citations,
ISSN(print/online): 0021-8979/1089-7550,
URL/DOI: http://dx.doi.org/10.1063/1.343350
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| 53) | Ghaisas, S.V., Madhukar, A. (1989). Nature of the oscillatory surface smoothness and its consequence during molecular‐beam epitaxy of strained layers: A computer simulation study. Journal of Applied Physics,
65 (5), 1888-1892. Google Scholar Citations,
ISSN(print/online): 0021-8979/1089-7550,
URL/DOI: http://dx.doi.org/10.1063/1.342899
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| 54) | Ghaisas, S.V., Bulakh, N.R., Kulkarni, S.A., Kanetkar, S.M., Ogale, S.B., Date, S.K., Mitra, A. (1989). Surface modification by electric-field-generated plasma at a liquid/solid interface. Journal of Physics D: Applied Physics,
22 (2), 364-367.
ISSN(print/online): 0022-3727/1361-6463,
URL/DOI: http://dx.doi.org/10.1088/0022-3727/22/2/022
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| 55) | Kulkarni, A.V., Lal, R., Kanetkar, S.M., Chaudhari, S.M., Ghaisas, S.V. (1989). Corrosion behaviour of pulsed laser treated maraging steel: Möussbauer spectroscopy and scanning electron microscopy study. Radiation Effects,
107 (2-4), 139-145. Google Scholar Citations,
ISSN(print/online): 0033-7579,
URL/DOI: http://dx.doi.org/10.1080/00337578908228558
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| 56) | Ghaisas, S.V., Madhukar, A. (1988). Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study. Applied Physics Letters,
53 (17), 1599-1601. Google Scholar Citations,
ISSN(print/online): 0003-6951/1077-3118 ,
URL/DOI: http://dx.doi.org/10.1063/1.99923
|
| 57) | Kanetkar, S.M., Patil, P.P., Ghaisas, S.V., Ogale, S.B., Bhide, V.G. (1988). Pulsed laser treatment at Fe/C6H6 interface: A Mössbauer effect study. Hyperfine Interactions,
41 (1), 587-590. Google Scholar Citations,
ISSN(print/online): 0304-3843/1572-9540,
URL/DOI: http://dx.doi.org/10.1007/BF02400459
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| 58) | Joshi, S., Phase, D.M., Kanetkar, S.M., Ghaisas, S.V., Ogale, S.B., Bhide, V.G. (1988). A conversion electron Mössbauer spectroscopy study of pulsed laser treatment at α-Fe2O3/H2O interface. Hyperfine Interactions,
41 (1), 689-692. Google Scholar Citations,
ISSN(print/online): 0304-3843/1572-9540,
URL/DOI: http://dx.doi.org/10.1007/BF02400484
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| 59) | Bulakh, N.R., Ghaisas, S.V., Kulkarni, S. A., Kanetkar, S.M., Ogale, S. B., Date, S.K. (1988). Surface oxides produced during discharge in water ambient iron surface: a conversion electron Mossbauer spectroscopic study. Hyperfine Interactions,
41 (1), 641-644. Google Scholar Citations,
ISSN(print/online): 0304-3843/1572-9540,
URL/DOI: http://dx.doi.org/10.1007/BF02400472
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| 60) | Ghaisas, S., Chaudhari, S.M., Kanetkar, S.M., Ghaisas, S.V., Kulkarni, V.N. (1988). Pulsed‐laser‐induced reactive alloying of Fe‐W system under benzene. Journal of Applied Physics,
64 (9), 4782-4784. Google Scholar Citations,
ISSN(print/online): 0021-8979/1089-7550,
URL/DOI: http://dx.doi.org/10.1063/1.341200
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| 61) | Bhandarkar, Y.V., Ghaisas, S.V., Ogale, S.B. (1988). Ion‐beam mixing at Fe:metallic‐glass (Fe6 7Co1 8B1 4Si1) interface: A conversion‐electron Mössbauer spectroscopic study. Journal of Applied Physics,
64 (2), 677. Google Scholar Citations,
ISSN(print/online): 0021-8979/1089-7550,
URL/DOI: http://dx.doi.org/10.1063/1.341960
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| 62) | Madhukar, A., Ghaisas, S.V. (1988). The nature of molecular beam epitaxial growth examined via computer simulations. Critical Reviews in Solid State and Materials Sciences,
14 (1), 1-130. Google Scholar Citations,
ISSN(print/online): 1040-8436/1547-6561,
URL/DOI: http://dx.doi.org/10.1080/01611598808241266
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| 63) | Madhukar, A., Chen, P., Voillot, F.,Thomsen, M., Kim, J.Y.,Tang, W.C., Ghaisas, S.V. (1987). A combined computer simulation, RHEED intensity dynamics and photoluminescence study of the surface kinetics controlled interface formation in MBE grown GaAs/AlxGa1−xAs(100) quantum well structures. Journal of Crystal Growth,
81, 26-33. Google Scholar Citations,
ISSN(print/online): 0022-0248/1873-5002,
URL/DOI: http://dx.doi.org/10.1016/0022-0248(87)90359-9
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| 64) | Thomsen, M., Ghaisas, S.V., Madhukar, A. (1987). Examination of the nature of lattice matched III–V semiconductor interfaces using computer simulated molecular beam epitaxial growth I. AC/BC interfaces. Journal of Crystal Growth,
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